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| FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK May 2006 FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Features * High speed switching * Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A * High input impedance * CO-PAK, IGBT with FRD : trr = 50 ns (typ.) * Short Circuit rated tm Applications Motor controls and general purpose inverters. Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. C G 1 TO-220F 1.Gate 2.Collector 3.Emitter E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C FGP7N60RUFD 600 20 14 7 21 12 60 41 16 -55 to +150 -55 to +150 300 Units V V A A A A A W W C C C Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 3.0 4.2 62.5 Units C/W C/W C/W (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGPF7N60RUFD Rev. A FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Package Marking and Ordering Information Device Marking FGPF7N60RUFD Device FGPF7N60RUFDTU Package TO-220F Packaging Type Rail / Tube Qty per Tube 50ea Max Qty per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ---- -0.6 --- --250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 7mA, VCE = VGE IC = 7A, VGE = 15V IC = 7A, VGE = 15V, TC = 125C IC = 14 A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---510 55 15 ---pF pF pF 5.0 ---6.5 1.95 2.1 2.65 8.0 2.8 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance Measured 5mm from PKG VCE = 300 V, IC = 7A, VGE = 15V VCC = 300 V, IC = 7 A, RG =30, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, IC = 7A, RG = 30, VGE = 15V, Inductive Load, TC = 25C ------------------60 60 60 170 0.23 0.10 0.33 65 70 55 350 0.25 0.27 0.52 24 4 10 7.5 --80 280 --0.5 -------36 6 15 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH FGPF7N60RUFD Rev. A 2 www.fairchildsemi.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Electrical Characteristics of DIODE T Symbol VFM C = 25C unless otherwise noted Parameter Diode Forward Voltage Test Conditions IF = 7A TC = 25C TC = 100C Min. --------- Typ. 1.65 1.58 50 58 2.5 3.3 62.5 95.7 Max. 2.1 -65 -3.75 -122 -- Units V trr Diode Reverse Recovery Time IF = 7A dI/dt = 200 A/s TC = 25C TC = 100C TC = 25C TC = 100C ns Irr Diode Peak Reverse Recovery Current A Qrr Diode Reverse Recovery Charge TC = 25C TC = 100C nC FGPF7N60RUFD Rev. A 3 www.fairchildsemi.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics Figure 1. Typical Output Characteristics 40 Figure 2. Typical Saturation Voltage Characteristics 40 C o m m o n E m itte r V GE = 1 5 V Tc = 25 C o Tc = 125 C o T C = 25 C o 20V 15V 12V Collector Current, IC [A] Collector Current, IC[A] 30 30 20 10V 20 10 V GE= 8V 10 0 0 2 4 6 8 C ollector-Em itter Voltage, V C E [V] 0 0 2 4 6 8 C o lle c to r-E m itte r V o lta g e , V C E [V ] Figure 3. Saturation Voltage vs Case Temperature at Variant Current Level 4 Com m om Em itter V GE = 15V Figure 4. Load Current vs Frequency 15 Vcc = 300V load Current : peak of square wave Collector - Emitter Voltage, VCE[V] IC = 7 A 2 IC =3.5 A Load Current [A] 3 IC = 14 A 10 5 1 0 25 50 75 100 o 125 150 0 0.1 Duty cycle : 50% o Tc = 100 C Power Dissipation = 14W 1 10 100 1000 Case Temperature, Tc [ C] Frequency [kHz] Figure 5. Saturation Voltage vs. Vge 10 [V] Common Emitter o T C = 25 C Figure 6. Saturation Voltage vs. Vge 10 C om m on E m itte r o T c = 12 5 C CE 8 Collector - Emitter Voltage, V Collector - Emitter Voltage, V CE [V] 8 6 6 4 7A 4 7A 1 4A 14A 2 IC =3.5A 2 Ic =3.5 A 0 5 10 15 20 G ate - E m itter V oltage, V G E [V ] 5 10 15 Gate - Emitter Voltage, V GE [V] 20 FGPF7N60RUFD Rev. A 4 www.fairchildsemi.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics Figure 7. Capacitance Characteristics Temperature at Variant Current Level 1000 Common Emitter V GE = 0V, f = 1MHz T C = 25 C Ciss o (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance Ton 800 Switching Time [ns] Capacitance [pF] 100 Tr 600 400 Coss Crss 200 C o m m o n E m itte r V C C = 3 0 0 V , V GE = + /-1 5 V IC = 7 A Tc = 25 C o Tc = 125 C 10 o 0 1 10 10 Collector-Emitter Voltage, V CE [V] G a te R e sista nce , R G [ ] 100 Figure 9. Turn-Off Characteristics vs. Gate Resistance Com m on Em itter V CC = 300V, V GE = +/-15V IC = 7A Tc = 25 C o Tc = 125 C Toff o Figure 10. Switching Loss vs. Gate Resistance 600 500 400 Switching Loss [uJ] 300 1000 C o m m o n E m itte r V C C = 3 0 0 V , V G E = + /-1 5 V IC = 7 A Tc = 25 C o Tc = 125 C o Eon E o ff Eon Switching Time [ns] Tf Toff 200 Tf 100 10 G a te R e s is ta nc e , R G [ ] E o ff 100 10 Gate Resistance, R G [ ] 100 100 Figure 11. Turn-On Characteristics vs. Collector Current 200 150 100 Common Emitter V GE = +/-15V, RG=30 IC = 7A Tc = 25 C o Tc = 125 C o Figure 12. Turn-Off Characteristics vs. Collector Current 1000 800 600 Switching Time [ns] Com m on Em itter V GE = +/-15V, R G =30 IC = 7A T c = 25 C o T c = 125 C T off o Switching Time [ns] Ton 400 50 Tr Tf T off 200 Tf 4 6 8 10 12 14 4 6 8 10 12 14 Collector Current, IC [A] C ollector C urrent, IC [A] FGPF7N60RUFD Rev. A 5 www.fairchildsemi.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current 1000 Common Emitter V GE = +/-15V, R G=30 Figure 14. Gate Charge Characteristics 15 Common Emitter R L = 43 ohm T C = 25 C Vcc = 100V 10 o Gate-Emitter Voltage, VGE [V] IC = 7A 200V Switching Loss [uJ] Tc = 25 C o Tc = 125 C o 300V Eoff Eon Eoff 5 100 4 6 8 10 12 14 0 0 4 Collector Current, IC [A] Gate Charge, Q g [nC] 8 12 16 20 24 Figure 15. SOA Characteristics 100 Ic MAX (Pulsed) 10 Ic MAX (Continuous) 100s 1ms 1 DC Operation 50s Collector Current, Ic [A] 0.1 0.01 0.1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 1 10 100 1000 Collector - Emitter Voltage, V CE [V] Figure 16. Transient Thermal Impedance of IGBT 10 Thermal Response [Zthjc] 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 0 .0 1 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c t a n g u la r P u ls e D u r a t io n [ s e c ] FGPF7N60RUFD Rev. A 6 www.fairchildsemi.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Typical Performance Characteristics Figure 17. Forward Voltage Characteristics (Continued) Figure 18. Reverse Recovery Current 3.0 10 Reverse Recovery Current , Irr [A] di/d t=200 A /u s 2.5 Forward Current , IF [A] 1 T C = 100 C o o 2.0 di/dt=10 0A /u s 1.5 T C = 25 C 0.1 0.5 1.0 1.5 2.0 2.5 3.0 1.0 2 4 6 8 10 12 14 Forward Voltage , VF [V] F orw ard C urrent , IF [A ] Figure 19. Stored Charge 80 Figure 20. Reverse Recovery Time 60 Reverse Recovery Charge , Qrr [nC] Reverse Recovery Time , trr [ns] 70 60 50 di/dt=100A/us di/dt=200A/us 50 40 di/dt=100A/us 40 di/dt=200A/us 30 2 4 6 8 10 12 14 30 2 4 6 8 10 12 14 Forward Current , IF [A] Forward Current , IF [A] Dimensions in Millimeters FGPF7N60RUFD Rev. A 7 www.fairchildsemi.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Mechanical Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 0 ) 0.35 0.10 2.54TYP [2.54 0.20] #1 2.54TYP [2.54 0.20] 4.70 0.20 0.50 -0.05 +0.10 2.76 0.20 9.40 0.20 FGPF7N60RUFD Rev. A 8 15.87 0.20 www.fairchildsemi.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support device 1. Life support devices or systems are devices or systems which, or system whose failure to perform can be reasonably expected (a) are intended for surgical implant into the body, or (b) support to cause the failure of the life support device or system, or to or sustain life, or (c) whose failure to perform when properly used affect its safety or effectiveness. in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 FGPF7N60RUFD Rev. A www.fairchildsemi.com |
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